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Broadband,Inc.
〒121-0832
東京都足立区
古千谷本町4-7-9
お問い合わせ
TEL:03-5838-0082
ask@bblaser.com
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取扱製品 |
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SIOM |
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上海の国立研究所の製品です。3at%Nd:YAGが有名
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TGT & Titanium Doped Sapphire Tunable Laser
Crystals |
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Titanium
doped sapphire is the most widely used crystal for wavelength tunable
lasers. It is also an excellent medium capable of generating
ultrashort pulse, high gain and high power lasing. We have
successfully produced large-sized (F 120´ 80mm) Ti:sapphire free of
light scatter and with disloca-tion density less than 102cm-2
by using the growth method of Temperature Gradient Techni-que (TGT).
TGT was invented by the scientists in SIOFM, which is characterized by
the capabilities of growing (0001) oriented sapphire with high
doping level (a 490=7.5cm-1), high gain, and
high laser damage threshold.
Pulsed,
quasi-cw, cw, ps and fs lasing with high efficiency have been realized
using TGT grown Ti:sapphire. Moreover, TGT grown Ti:sapphire can also
meet current applications such as in large aperture amplifiers
(diameter up to 50mm) for high power genera-tion and laser fusion etc. |
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Material Properties |
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Physical |
Chemical Formula Ti3+: Al2O3
Crystal Structure Hexagonal
Unite Cell a=4.758, c=12.991
Density 3.98g/cm3
Hardness 9mols,
1525-2000 Knoop
Melting Point 2040 ℃ |
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Laser |
Laser Action 4-Level Vibronic
Absorption Band 400-600nm(peak at 490)
Tunable Range 660-1100nm(peak at 490)
Fluorescence Time 3.2 ms
Peak Cross-section 3-4´ 10-19cm2
Refractive Index 1.76 (nominal) |
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Laser Rods Specification |
Doped Level 0.06-0.5 wt% Ti2O3
FOM 100-300
Diameter 2-50mm or specified
Brewster¢ s Angle or Specified
a 490 1.0-7.5 cm-1
Flatness 0.1-0.2 l
Path Length 2-100mm or Specified |
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Thermal |
Thermal Conductivity 0.105 cal/cm-sec-℃
Thermal Expansion 8.40´ 10-6/℃
Specific Heat 0.10 cal/g
Heat Capacity 18.6 cal/℃-mole |
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Cr:Mg2SiO4 |
Sapphire |
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Cr:4+YAG |
YAG |
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Super
Nd:YAG |
Yb:YAG |
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Nd:YVO4 |
Ti:Sapphire Tunable Laser Crystals |
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